Plasma-assisted atomic layer deposition of Ta2O5 from alkylamide precursor and remote O2 plasma

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Plasma-assisted atomic layer deposition of Ta2O5 from alkylamide precursor and remote O2 plasma

• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website. • The final author version ...

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Introduction to (plasma-enhanced) atomic layer deposition

Film growth by the atomic layer deposition (ALD) method relies on alternate pulsing of the precursor gases and vapors into a vacuum chamber and their subsequent chemisorption on the substrate surface (Fig. 1) [1,2]. The different steps in the process are saturative such that ALD film growth is self-limiting yielding one submonolayer of film per deposition cycle. ALD has some unique characterist...

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Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System

Hafnium oxide (HfO2) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynamic stability with silicon. However, the surface passivation properties of such films, particularly on crystalline silicon (c-Si), have rarely been reported upon. In this study, the HfO2 ...

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Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry

• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website. • The final author version ...

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Nanometer-thick conformal pore sealing of self-assembled mesoporous silica by plasma-assisted atomic layer deposition.

On a porous substrate, regular atomic layer deposition (ALD) not only takes place on top of the substrate but also penetrates into the internal porosity. Here we report a plasma-assisted process in which the ALD precursors are chosen to be nonreactive unless triggered by plasma, so that ALD can be spatially defined by the supply of plasma irradiation. Since plasma cannot penetrate within the in...

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ژورنال

عنوان ژورنال: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

سال: 2008

ISSN: 0734-2101,1520-8559

DOI: 10.1116/1.2905250